Diodes are the connection PN material that serves primarily as a rectifier. P-type material into the anode side while the N-type material into the cathode. Depending on the polarity of the voltage given to him, the diode can act as a switch is closed, if the anode gain a positive voltage while katodenya get a negative voltage. And apply as a switch opens when the anode have a negative voltage while the cathode get a positive voltage. This condition occurs only in the ideal diode-conceptual. In diode factual (real), it is necessary voltage greater than 0.7 V (for diodes made of silicon) on the anode to the cathode for the diode to conduct electrical current. Voltage of 0.7 V is called a barrier voltage. Semi-conductor diode there are two kinds of silicon and germanium. In general that is used is silicone, which is not a conductor material and not insulators but have properties between them. A diode is divided into two parts, namely N-type silicon and silicon-type P. N-type manufacturing process with a chemical process called doping, this material is made to have the free electrons in larger quantities. P-type doping is obtained by a different process in order to get a lot of holes. Hole shift from one atom to another atom in the silicon material. It is common to assume a free electron in a silicon N (anode) and holes in silicon P (cathode) as the carrier flow.
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Picture 1. Meeting P-N is an insulator |
Regional meetings between P and N called the meeting to form a PN diode. At the meeting, free electrons from silicon material to fill holes in material N P, so this area is no more free electrons and holes so that the silicon becomes an insulator.
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Picture 2. Symbols and physical form diodes | |
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Picture 3. Given diode reverse bias |
If the diodes are reverse bias (+ to the N and - to P), see figure 3, the diode does not deliver because of the expanding PN meeting, see Figure 3. When the diodes are forward biased (+ to P and - to N), see figure 2.5a, then the insulating area does not appear that deliver diode, see figure 4.
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Picture 5. Given diode forward bias |
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